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Technical Parameters
| No. | Characteristic | Unit | Spec |
|---|---|---|---|
| 1 | Purity | % | ＞6N |
| 2 | Diameter scale | mm | 0 ~ 800 |
| 3 | Type/Contains | / | P type/ N type |
| 4 | Resistivity | Ω•cm3 | <0.02 / 0.02~1 / 1~5 |
| 5 | Oxygen saturation | ppma | ≤10 |
| 6 | Carbon saturation | ppma | ≤10 |
Technical Advantages
Ultra-Large Monocrystalline Size：Achieve 800mm x 800mm monolithic silicon ingots, enabling seamless processing of large-sized silicon components while minimizing material waste and joint defects.
Low Dislocation Density：Deliver dislocation density <10³ cm⁻², comparable to Czochralski (CZ) monocrystalline silicon, ensuring exceptional structural uniformity for precision semiconductor and industrial applications.
Cost-Effective Production：Leverage cast-grown technology to reduce manufacturing costs by 20%-30% versus traditional CZ methods, while maintaining single-crystal performance.
Superior Machinability：Optimized crystal integrity supports advanced cutting, polishing, and etching processes, achieving 15%+ yield improvement for high-end industrial silicon components.
Consistent Quality at Scale：Advanced growth control ensures axial/radial resistivity variation <5%, enabling reliable mass production of defect-free monocrystalline materials.