Provide One-stop Solutions For Si Materials
Technical Parameters
| No. | Characteristic | Unit | Spec |
|---|---|---|---|
| 1 | Purity | % | ＞6N/9N |
| 2 | Material | / | Mono / Poly |
| 3 | Diameter scale | mm | 0~600 / Customizable |
| 4 | Type/Contains | / | P type/ N type |
| 5 | Resistivity | Ω•cm3 | <0.02 / 1~4 / 60~90 |
| 6 | Crystal Orientation | / | (100)、(111)、(110) |
| 7 | Product Length | mm | 1~1000 |
| 8 | Surface treatment | / | Polishing |
Technical Advantages
Submicron Geometric Accuracy (<±0.2μm) with Multi-axis Diamond Tooling：Achieve complex 3D shapes (prisms, hexagons, waveguides) while preserving crystal lattice integrity.
Semiconductor-Grade Material Compliance (6N+ Purity, ASTM F57)：Guaranteed <0.01ppb metallic impurities for quantum computing and hyperspectral optics applications.
Non-Destructive Edge Profiling via Laser Shock Peening：Create chamfers/radii down to 50μm without microfractures, critical for MEMS membrane durability.
Crystal Orientation-Aligned Machining (XRD Verified)：Precision alignment to <100>, <110>, or <111> planes with 0.5° angular tolerance for epitaxial growth.
CTE-Matched Hybrid Bonding Surfaces：Ultra-flat interfaces (Ra<0.1nm) engineered for direct fusion with Si,or sapphire substrates.
In-situ Metrology-Enabled Adaptive Processing：Real-time Raman spectroscopy feedback adjusts machining parameters to prevent phase transformation.
Vacuum-Compatible Geometric Stability：Maintain dimensional tolerance <5ppm under 10^-9 Torr environments, ideal for space-grade sensors.