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Technical Parameters
| No. | Characteristic | Unit | Spec |
|---|---|---|---|
| 1 | Purity | % | 6N、9N、11N |
| 2 | Diameter scale | mm | 00.0 ~ 480.0 |
| 3 | Type/Contains | / | P type/ N type |
| 4 | Resistivity | Ω•cm3 | <0.02 / 1~4 / 60~90 |
| 5 | Crystal Orientation | / | 、、 |
| 6 | Oxygen saturation | ppma | ≤15 |
| 7 | Carbon saturation | ppma | ≤1 |
Technical Advantages
Our semiconductor-grade monocrystalline silicon ingots achieve purity levels exceeding 9N, coupled with High purity, few defects and low impurities；
The same crystal orientation in the plane, and less difference in physical properties, available in <100>, <111>, and <110> crystal orientations with diameters spanning 2-12 inches, The single crystal ingot has a maximum diameter of 470mm；
Tailor electrical properties with exact boron (B), phosphorus (P), or arsenic (As) doping profiles, enabling customized resistivity (0.001–100 Ω·cm) for applications from high-frequency chips to radiation-hardened sensors.
Utilizing state-of-the-art CZ (Czochralski) crystal growth technology, we guarantee uniform structural integrity, minimal oxygen content, and superior crystal homogeneity across all ingots;
- Rigorous in-process quality control ensures batch-to-batch uniformity in resistivity, oxygen content, and mechanical strength, reducing downstream processing risks for manufacturers.