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Technical Parameters
| No. | Characteristic | Unit | Spec |
|---|---|---|---|
| 1 | Purity | % | ＞9N |
| 2 | Material | / | Mono |
| 3 | Diameter scale | mm | 0~1000 / Customizable |
| 4 | Type/Contains | / | P type/ N type |
| 5 | Resistivity | Ω•cm3 | <0.02 / 1~4 / 60~90 |
| 6 | Crystal Orientation | / | (100)、(111)、(110) |
| 7 | Operating Temperature | ℃ | <1250 ℃ |
| 8 | Length | mm | 50~2000 |
Technical Advantages
Ultra-High Purity & Low Defect Density：Manufactured from electronic-grade single crystal silicon (9N purity) with impurity levels below 0.1 ppb, ensuring zero contamination in semiconductor processes and significantly improving wafer yield.
Exceptional Thermal Stability：Withstands extreme temperatures up to 1,250°C, featuring ultra-low thermal expansion coefficient (≈3×10⁻⁶/°C) and superior thermal shock resistance, ideal for rapid temperature cycling in oxidation, diffusion, and LPCVD processes.
Chemical Inertness for Process Integrity：Grain boundary-free surface eliminates side reactions with aggressive gases (e.g., Cl₂, HCl, H₂), preventing particle shedding and ensuring film uniformity (thickness variation < ±2%).
Extended Lifespan & Reduced Maintenance：Monocrystalline structure delivers outstanding creep resistance, with a service life exceeding 5,000 hours under continuous high-temperature operation, reducing downtime costs by 30%.
Compatibility with Advanced Nodes：Supports sub-3nm process technologies, meeting stringent cleanliness requirements for EUV lithography and High-k dielectric deposition, enabling mass production of cutting-edge chips.
Precise Thermal Field Control：Thermal conductivity (≈150 W/m·K) closely matches quartz, achieving furnace temperature gradients ≤1°C/cm for uniform wafer doping (RSD < 3%).
Sustainability Alignment：Compliant with SEMI F47 standards, compatible with hydrogen-based and low-carbon processes (e.g., SiH₄-Cl₂ gas mixtures), supporting semiconductor industry carbon neutrality goals.