Provide One-stop Solutions For Si Materials

- Ultra-high purity (up to 11N, 99.999999999%) to ensure electronic performance .
- Doping capabilities (e.g., boron for p-type or phosphorus for n-type) to tailor conductivity .
- Precision diameters (e.g., 200mm/300mm) to meet industry standards for wafer fabrication.
Technical Parameters
No. | Characteristic | Unit | Spec |
---|---|---|---|
1 | Purity | % | >6N/9N |
2 | Material | / | Mono |
3 | Diameter scale | mm | 0~300 / Customizable |
4 | Type/Contains | / | P type/ N type |
5 | Resistivity | Ω•cm3 | <0.02 / 1~4 / 60~90 |
6 | Crystal Orientation | / | (100)、(111)、(110) |
7 | Product Length | mm | 1~300 |
8 | Surface treatment | / | Polishing |

Technical Advantages
Ultra-High Purity & Structural Integrity:Ensures uniform lattice alignment for defect-free monocrystalline silicon growth, critical for high-performance semiconductors and solar cells.
Precision Crystallographic Orientation Control:Customizable orientations (e.g., <100>, <111>) to optimize electrical properties and device efficiency in targeted applications.
Enhanced Yield in Czochralski (CZ) Process:Minimizes thermal stress and dislocation defects, enabling faster production of high-quality silicon ingots with reduced material waste.
Long-Term Thermal Stability:Maintains structural integrity under extreme temperatures, supporting reliable crystal growth for industrial-scale manufacturing.
Versatility Across Industries:Compatible with semiconductor fabrication, photovoltaic systems, and advanced electronics, ensuring broad applicability.
Advanced Surface Polishing Technology:Ultra-smooth seed surfaces reduce nucleation errors, accelerating consistent crystal replication.