Provide One-stop Solutions For Si Materials
Technical Parameters
| No. | Characteristic | Unit | Spec |
|---|---|---|---|
| 1 | Purity | % | ＞6N |
| 2 | Material | / | Mono / Poly |
| 3 | Diameter scale | mm | 0~2000 / Customizable |
| 4 | Type/Contains | / | P type/ N type |
| 5 | Resistivity | Ω•cm3 | <0.02 / 1~4 / 60~90 |
| 6 | Crystal Orientation | / | (100)、(111)、(110) |
| 7 | Dopant | / | B、P、Ga、As、Sb |
| 8 | Ra | um | ≤0.8 |
Technical Advantages
Seamless One-Piece Design Up to 1500mm：Achieve uninterrupted thin-film deposition withmonolithic silicon tube targets, eliminating joint defects for quantum devices and high-precision optics.
Wide Diameter Customization (10mm–600mm)：Adapt to any PVD system configuration, from micro-scale MEMS sensors to industrial solar cell coating, with precision-engineered cylindrical targets.
Ultra-High Purity (99.9999%) Monocrystalline Tubes：Ensure defect-free semiconductor films for advanced ICs and photonic applications, certified for ISO Class 3 cleanroom processes.
Cost-Efficient Polycrystalline Solutions：Reduce material waste by 30% using segmented polycrystalline silicon tubes, ideal for large-area wear-resistant coatings.
Enhanced Coating Uniformity in Rotational Sputtering：Optimize thin-film homogeneity with cylindrical geometry, achieving <1% thickness variation in 3D component coatings.
Dual Resistivity Control (0.001Ω·cm to 100Ω·cm)：Tailor electrical properties for RF components, power devices, or insulating layers with customized doping profiles.
Rapid Thermal Conductivity & Stability：Minimize thermal stress in high-power sputtering with crystalline silicon’s superior heat dissipation, extending target lifespan by 40%.