Provide One-stop Solutions For Si Materials
Technical Parameters
| Project | Content |
|---|---|
| Diameter | 2"(50.8mm)、3"(76.2mm)、4"(100mm)、5"(125mm)、6"(150mm)、8"(200mm)、12"(300mm) |
| Grade | Prime、Test、Dummy、Reclaimed |
| Growth Method | CZ、FZ |
| Orientation | 100 , 111 , 110 |
| Type/Dopant | P Type/Boron、 N Type/Phos、 N Type/As、N Type/Sb |
| Resistivity | From 0.001 to 10000 ohm-cm |
| Thickness (μm) | 50~3000μm |
| Thickness Tolerance | Standard ± 25μm、Maximum Capabilities ± 5μm |
| TTV (μm) | Standard < 10 um、Maximum Capabilities <5 um |
| Bow/Warp (μm) | Standard <40 um、Maximum Capabilities <20 um |
| Finish | As cut、Lapped、 Etched、 SSP、DSP、etc |
| Off cut | up to 7 deg |
| Particle | <10@0.5um、<10@0.3um、 <10@0.2um |
Technical Advantages
Ultra-Precision Surface Control：Atomic-level surface roughness (<0.3nm Ra) with double-side polishing (DSP) technology, enabling defect-sensitive MEMS and nanoscale sensor fabrication.
Flexible Process Adaptability：Compatible with both p-type (Boron-doped) and n-type (Phosphorus/Arsenic-doped) configurations, covering resistivity from 0.001 to 100 Ω·cm for R&D versatility.
Sustainable Cost Efficiency：Reclaimed-grade wafers reduce production costs by 40% while maintaining <15 particles/cm² cleanliness, ideal for non-critical process verification.
Rapid Prototyping Enabler：Thickness tolerance ±10μm and instant-access 100/111 crystal orientations accelerate optoelectronic device development cycles by 30%.
Cross-Industry Compatibility：SEMI-standardized edge profiling ensures seamless integration with 150mm/200mm fab tools for hybrid semiconductor-photovoltaic workflows.
Zero-Contamination Guarantee：Class 10 cleanroom packaging with nitrogen-sealed containers prevents oxidation during storage and shipping.