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Silicon Etch Electrode
-Silicon Electrode
Silicon electrodes, also known as showerhead electrodes, are critical components in semiconductor dry etching equipment, designed to generate and distribute plasma while ensuring precise material removal during processes like reactive ion etching (RIE) and inductively coupled plasma (ICP) etching. These electrodes typically consist of high-purity silicon or silicon carbide (SiC) coatings, offering exceptional thermal stability and resistance to corrosive gases such as fluorine and chlorine.
  • Dual Functionality: Serve as both electrical conductors to generate plasma and gas distribution plates to deliver etching gases (e.g., SF₆, CF₄) uniformly across the wafer surface.
  • Precision Machining: Micro-engineered with thousands of sub-millimeter holes (e.g., 0.45mm diameter) to ensure gas flow uniformity, critical for maintaining etch rate consistency and minimizing defects.
  • Material Compatibility: High-purity silicon electrodes resist chemical attack from aggressive etchants, while SiC coatings enhance durability in high-temperature environments (up to 1400°C).
  • Customization: Available in sizes ranging from 200mm to 450mm, with design variations including vacuum channels, anti-static surfaces, and alignment features for automated handling systems.
These electrodes are integral to semiconductor fabrication, enabling the creation of high-aspect-ratio structures in logic chips, memory devices, and MEMS sensors. Their role in plasma generation and gas distribution directly impacts process efficiency, yield, and device performance. For optimal performance, silicon electrodes are often paired with advanced plasma control systems to achieve etch rates exceeding 200nm/min while maintaining selectivity ratios up to 100:1

Technical Parameters

No.CharacteristicUnitSpec
1Purity%＞6N
2Material/Mono Si
3Diameter scalemm0~500 / Customizable
4Type/Contains/P type/ N type
5ResistivityΩ•cm3<0.02 / 1~4 / 60~90
6Crystal Orientation/(100)、(111)、(110)
7Dopant/B、P、Ga、As、Sb
8Surface treatment/Polishing
Plasma Etch Showerhead

Technical Advantages

  1. Ultra-High Purity Silicon (99.9999%)：Minimizes contamination risks in critical processes like EUV etching, ensuring defect-free wafer surfaces.

  2. Superior Plasma & Chemical Resistance：Withstands aggressive plasmas (CF₄, Cl₂, SF₆) and reactive gases, maintaining performance over 15,000+ process cycles.

  3. Precision Gas Distribution Design：Optimized showerhead hole geometry achieves ±1% gas flow uniformity, enabling sub-3nm etch rate variation across 300mm wafers.

  4. Extreme Thermal Stability (up to 600°C)：Monocrystalline silicon structure prevents warping under rapid thermal cycling, critical for high-power RF plasma environments.

  5. Low-Particle Surface Technology：Mirror-polished finish (Ra <0.3nm) reduces micro-arcing and particle generation, improving yield to >99.98%.

  6. Advanced RF Coupling Efficiency：Engineered dielectric properties ensure 95%+ RF energy transfer, enhancing plasma density and process repeatability.

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Si Material
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Si Material
Si Target
Si Material
Si Part
Si Material
Si Ring
Si Material
Si Shaped
Si Material
Si Wafer
Si Material
Si Optical
Si Material
Quartz Part