실리콘 소재를 위한 원스톱 솔루션 제공
Home / Products / Si Material / Mono Si Rod
기술 사양
| 아니요. | 특징 | 단위 | 사양 |
|---|---|---|---|
| 1 | 순수함 | % | 6N、9N、11N |
| 2 | 직경 눈금 | 음 | 00.0 ~ 480.0 |
| 3 | 유형/포함 사항 | / | P형/ N형 |
| 4 | 저항률 | Ω·cm³ | <0.02 / 1~4 / 60~90 |
| 5 | 결정 방향 | / | 、、 |
| 6 | Oxygen saturation | ppma | ≤15 |
| 7 | Carbon saturation | ppma | ≤1 |
기술적 장점
Our semiconductor-grade monocrystalline silicon ingots achieve purity levels exceeding 9N, coupled with High purity, few defects and low impurities；
The same crystal orientation in the plane, and less difference in physical properties, available in <100>, <111>, and <110> crystal orientations with diameters spanning 2-12 inches, The single crystal ingot has a maximum diameter of 470mm；
Tailor electrical properties with exact boron (B), phosphorus (P), or arsenic (As) doping profiles, enabling customized resistivity (0.001–100 Ω·cm) for applications from high-frequency chips to radiation-hardened sensors.
Utilizing state-of-the-art CZ (Czochralski) crystal growth technology, we guarantee uniform structural integrity, minimal oxygen content, and superior crystal homogeneity across all ingots;
- Rigorous in-process quality control ensures batch-to-batch uniformity in resistivity, oxygen content, and mechanical strength, reducing downstream processing risks for manufacturers.