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단면 연마 실리콘 웨이퍼, 양면 연마 실리콘 웨이퍼, 화학적 기계적 연마(CMP) 실리콘 웨이퍼
Covering diameters from 2-inch (50.8mm) to 6-inch (150mm), Jingge’s silicon wafers are engineered for versatility across semiconductor R&D, MEMS production, and industrial applications. Available in Prime (ultra-low defects, <0.5nm Ra), Test (equipment validation), Dummy (process calibration), and Reclaimed (cost-effective recycling) grades, these substrates support both double-side polished (DSP) and single-side polished (SSP) finishes. Prime-grade wafers achieve resistivity uniformity (±3%) with oxygen content <7ppma, ideal for advanced IC prototyping. All sizes feature thickness tolerance ±15μm, TTV <5μm, and particle control <20/cm², complying with SEMI standards. Customizable doping (Boron/Phosphorus), crystal orientations (100/110/111), and edge profiles ensure compatibility with 150mm-300mm fab ecosystems. Reclaimed wafers reduce costs by 50% while maintaining production-grade cleanliness for non-critical processes.

기술 사양

프로젝트내용
직경2"(50.8mm), 3"(76.2mm), 4"(100mm), 5"(125mm), 6"(150mm), 8"(200mm), 12"(300mm)
등급Prime, Test, Dummy, Reclaimed
성장 방법CZ, FZ
오리엔테이션 100 , 111 , 110
유형/도핑제P형/붕소, N형/인, N형/비소, N형/안티몬
저항률0.001에서 10,000 옴·cm까지
두께 (μm)50~3000μm
두께 공차표준 ± 25μm, 최대 정밀도 ± 5μm
TTV (μm)Standard < 10 um、Maximum Capabilities <5 um
보/워프 (μm)Standard <40 um、Maximum Capabilities <20 um
완료절단, 래핑, 에칭, SSP, DSP 등
자투리최대 7도
입자<10@0.5um、<10@0.3um、 <10@0.2um
Double-side polished (DSP) 2-4-6 inch wafers
Reclaimed silicon wafers for cost efficiency

기술적 장점

  1. Ultra-Precision Surface Control:Atomic-level surface roughness (<0.3nm Ra) with double-side polishing (DSP) technology, enabling defect-sensitive MEMS and nanoscale sensor fabrication.

  2. Flexible Process Adaptability:Compatible with both p-type (Boron-doped) and n-type (Phosphorus/Arsenic-doped) configurations, covering resistivity from 0.001 to 100 Ω·cm for R&D versatility.

  3. Sustainable Cost Efficiency:Reclaimed-grade wafers reduce production costs by 40% while maintaining <15 particles/cm² cleanliness, ideal for non-critical process verification.

  4. Rapid Prototyping Enabler:Thickness tolerance ±10μm and instant-access 100/111 crystal orientations accelerate optoelectronic device development cycles by 30%.

  5. Cross-Industry Compatibility:SEMI-standardized edge profiling ensures seamless integration with 150mm/200mm fab tools for hybrid semiconductor-photovoltaic workflows.

  6. Zero-Contamination Guarantee:Class 10 cleanroom packaging with nitrogen-sealed containers prevents oxidation during storage and shipping.