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기술 사양
| 아니요. | 특징 | 단위 | 사양 |
|---|---|---|---|
| 1 | 순수함 | % | ＞6N |
| 2 | 직경 눈금 | 음 | 0 ~ 800 |
| 3 | 유형/포함 사항 | / | P형/ N형 |
| 4 | 저항률 | Ω·cm³ | <0.02 / 0.02~1 / 1~5 |
| 5 | Oxygen saturation | ppma | ≤10 |
| 6 | Carbon saturation | ppma | ≤10 |
기술적 장점
Ultra-Large Monocrystalline Size：Achieve 800mm x 800mm monolithic silicon ingots, enabling seamless processing of large-sized silicon components while minimizing material waste and joint defects.
Low Dislocation Density：Deliver dislocation density <10³ cm⁻², comparable to Czochralski (CZ) monocrystalline silicon, ensuring exceptional structural uniformity for precision semiconductor and industrial applications.
Cost-Effective Production：Leverage cast-grown technology to reduce manufacturing costs by 20%-30% versus traditional CZ methods, while maintaining single-crystal performance.
Superior Machinability：Optimized crystal integrity supports advanced cutting, polishing, and etching processes, achieving 15%+ yield improvement for high-end industrial silicon components.
Consistent Quality at Scale：Advanced growth control ensures axial/radial resistivity variation <5%, enabling reliable mass production of defect-free monocrystalline materials.