실리콘 소재를 위한 원스톱 솔루션 제공
- Dual Functionality: Serve as both electrical conductors to generate plasma and gas distribution plates to deliver etching gases (e.g., SF₆, CF₄) uniformly across the wafer surface.
- Precision Machining: Micro-engineered with thousands of sub-millimeter holes (e.g., 0.45mm diameter) to ensure gas flow uniformity, critical for maintaining etch rate consistency and minimizing defects.
- Material Compatibility: High-purity silicon electrodes resist chemical attack from aggressive etchants, while SiC coatings enhance durability in high-temperature environments (up to 1400°C).
- Customization: Available in sizes ranging from 200mm to 450mm, with design variations including vacuum channels, anti-static surfaces, and alignment features for automated handling systems.
기술 사양
| 아니요. | 특징 | 단위 | 사양 |
|---|---|---|---|
| 1 | 순수함 | % | ＞6N |
| 2 | 재료 | / | Mono Si |
| 3 | 직경 눈금 | 음 | 0~500 / Customizable |
| 4 | 유형/포함 사항 | / | P형/ N형 |
| 5 | 저항률 | Ω·cm³ | <0.02 / 1~4 / 60~90 |
| 6 | 결정 방향 | / | (100), (111), (110) |
| 7 | 도판트 | / | B, P, Ga, As, Sb |
| 8 | 표면 처리 | / | 연마 |
기술적 장점
Ultra-High Purity Silicon (99.9999%)：Minimizes contamination risks in critical processes like EUV etching, ensuring defect-free wafer surfaces.
Superior Plasma & Chemical Resistance：Withstands aggressive plasmas (CF₄, Cl₂, SF₆) and reactive gases, maintaining performance over 15,000+ process cycles.
Precision Gas Distribution Design：Optimized showerhead hole geometry achieves ±1% gas flow uniformity, enabling sub-3nm etch rate variation across 300mm wafers.
Extreme Thermal Stability (up to 600°C)：Monocrystalline silicon structure prevents warping under rapid thermal cycling, critical for high-power RF plasma environments.
Low-Particle Surface Technology：Mirror-polished finish (Ra <0.3nm) reduces micro-arcing and particle generation, improving yield to >99.98%.
Advanced RF Coupling Efficiency：Engineered dielectric properties ensure 95%+ RF energy transfer, enhancing plasma density and process repeatability.