Silicon Focus Ring - Jingge Semi Expert in silicon materials and parts

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Silicon Focus Rings are critical components in semiconductor dry etching equipment, designed to optimize plasma distribution and protect wafer edges during reactive ion etching (RIE) and inductively coupled plasma (ICP) processes. Constructed from high-purity silicon or silicon carbide (SiC) coatings, these rings feature precision-engineered geometries to control plasma confinement and minimize edge effects, ensuring uniform etch rates across the wafer surface.

Plasma Confinement: By generating an electric field around the wafer perimeter, silicon focus rings direct plasma ions toward the target area, reducing etch non-uniformity caused by plasma diffusion.
Edge Protection: Their concave or stepped design shields the wafer’s edge from excessive plasma bombardment, preventing damage during high-energy etching.
Material Compatibility: High-purity silicon variants resist corrosion from fluorine-based etchants (e.g., SF₆), while SiC-coated rings withstand extreme temperatures (up to 1400°C) and corrosive environments.
Customization: Available in diameters from 8″ to 12″ (200–300mm), with options like vacuum channels for secure wafer clamping and anti-static surfaces to mitigate particle contamination.

Silicon focus rings are integral to logic IC, memory device, and MEMS fabrication, enabling the production of high-aspect-ratio structures with etch precision down to sub-10nm scales. For advanced processes, silicon carbide (SiC) focus rings are increasingly adopted due to their superior thermal stability and resistance to plasma erosion, extending component lifespan in high-power etching systems.

기술 사양

아니요.	특징	단위	사양
1	순수함	%	＞6N
2	재료	/	모노 / 폴리
3	직경 눈금	음	0~500 / Customizable
4	유형/포함 사항	/	P type / N type
5	저항률	Ω·cm³	<0.02 / 1~4 / 60~90
6	결정 방향	/	(100), (111), (110)
7	도판트	/	B, P, Ga, As, Sb
8	표면 처리	/	연마

기술적 장점

High-Purity Silicon (99.99999%)：Engineered with contamination-free material to eliminate wafer edge defects in ultra-sensitive EUV and high-k dielectric etching processes.
Extreme Plasma & Chemical Resistance：Withstands corrosive plasmas (Cl₂, O₂, HBr) and thermal cycling up to 750°C, ensuring 20,000+ process cycles without degradation.
Edge Etch Uniformity Control：Precision-machined geometry reduces edge exclusion zones to <1mm and achieves ±1% etch rate uniformity across 300mm wafers.
Multi-Frequency RF Compatibility：Optimized dielectric properties ensure stable plasma coupling under 2MHz-60MHz RF ranges, critical for advanced 3D NAND and GAA transistor fabrication.
Low-Particle Surface (Ra <0.2nm)：Atomic-level polishing minimizes micro-arcing and particle adhesion, improving overall wafer yield to >99.97%.

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