실리콘 소재를 위한 원스톱 솔루션 제공
- Ultra-high purity (up to 11N, 99.999999999%) to ensure electronic performance .
- Doping capabilities (e.g., boron for p-type or phosphorus for n-type) to tailor conductivity .
- Precision diameters (e.g., 200mm/300mm) to meet industry standards for wafer fabrication.
기술 사양
| 아니요. | 특징 | 단위 | 사양 |
|---|---|---|---|
| 1 | 순수함 | % | >6N/9N |
| 2 | 재료 | / | 모노 |
| 3 | 직경 눈금 | 음 | 0~300 / Customizable |
| 4 | 유형/포함 사항 | / | P형/ N형 |
| 5 | 저항률 | Ω·cm³ | <0.02 / 1~4 / 60~90 |
| 6 | 결정 방향 | / | (100), (111), (110) |
| 7 | 제품 길이 | 음 | 1~300 |
| 8 | 표면 처리 | / | 연마 |
기술적 장점
Ultra-High Purity & Structural Integrity:Ensures uniform lattice alignment for defect-free monocrystalline silicon growth, critical for high-performance semiconductors and solar cells.
Precision Crystallographic Orientation Control:Customizable orientations (e.g., <100>, <111>) to optimize electrical properties and device efficiency in targeted applications.
Enhanced Yield in Czochralski (CZ) Process:Minimizes thermal stress and dislocation defects, enabling faster production of high-quality silicon ingots with reduced material waste.
Long-Term Thermal Stability:Maintains structural integrity under extreme temperatures, supporting reliable crystal growth for industrial-scale manufacturing.
Versatility Across Industries:Compatible with semiconductor fabrication, photovoltaic systems, and advanced electronics, ensuring broad applicability.
Advanced Surface Polishing Technology:Ultra-smooth seed surfaces reduce nucleation errors, accelerating consistent crystal replication.
